BC857BFZ document number: ds37158 rev. 2 - 2 1 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product 45v pnp small signal transistor in dfn0 6 06 features ? bv ceo > - 45 v ? i c = - 100ma high collector current ? p d = 925 mw power dissipation ? 0. 36 mm 2 p ackage f ootprint, 40% s maller than dfn1006 ? 0.4mm h eight p ackage m inimizing o ff - board p rofile ? complementary npn type bc847bfz ? totally lead - free & fully rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: x2 - dfn0606 - 3 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? nipdau, solderable per mil - std - 202, method 208 ? weight: 0.0008 grams ( approximate ) ordering information (note 4 ) product marking reel size (inches) tape width (mm) quantity per reel bc857 b f z - 7 b 3w 7 8 10 ,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free " green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information 3w = product type marking code top view bar denotes base and emitter side top view device schematic bottom view x2 - dfn0606 - 3 device s ymbol top view c e b e4
BC857BFZ document number: ds37158 rev. 2 - 2 2 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 50 v collector - emitter voltage v ceo - 45 v emitter - base voltage v ebo - 6 .0 v continuous collector current i c - 100 ma peak pulse collector current i cm - 2 00 ma thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 2 70 mw (note 6) 925 thermal resistance, junction to ambient (note 5) r ? ja 4 65 ? ? jl 135 c/w ? j , t stg - 55 to +150 c esd ratings (note 8 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4 ,000 v 3 a electrostatic discharge - machine model esd mm 2 00 v b notes: 5 . for the device mounted on minimum recommended pad layout 1oz copper that is on a single - sided 1.6mm fr4 pcb; device is measured under still air conditions whilst operating in steady state condition. the entire exposed collector pad is attached to the heatsink. 6. same as note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. thermal resistance from junction to solder - point (on the exposed collector pad). 8 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
BC857BFZ document number: ds37158 rev. 2 - 2 3 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product thermal characteristics and derating information 100m 1 10 1m 10m 100m single pulse t amb =25c minimum copper v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.00 0.05 0.10 0.15 0.20 0.25 0.30 minimum copper derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 250 300 350 400 450 500 t amb =25c minimum copper transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 0.1 1 10 100 single pulse t amb =25c minimum copper pulse power dissipation pulse width (s) maximum power (w)
BC857BFZ document number: ds37158 rev. 2 - 2 4 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typical max unit test condition off characteristics collector - base breakdown voltage bv cbo - 50 - 100 c = - 50a, i b = 0 collector - emitter breakdown voltage bv ces - 50 - 90 c = - 50a, i b = 0 collector - emitter breakdown voltage (note 9 ) bv ceo - 45 - 65 c = - 1ma, i b = 0 collector - base breakdown voltage bv ebo - 6.0 - 8.5 e = - 50a, i c = 0 collector - base cutoff current i cbo cb = - 40v collector - emitter cutoff current i ces ce = - 40v on characteristics (note 9 ) dc current gain h fe 100 200 340 330 c = - 10a, v ce = - 5.0v i c = - 2.0ma, v ce = - 5.0v collector - emitter saturation voltage v ce(sat) c = - 10ma, i b = - 0.5ma i c = - 100ma, i b = - 5.0ma base - emitter saturation voltage v be(sat) c = - 10ma, i b = - 0.5ma i c = - 100ma, i b = - 5.0ma base - emitter voltage v be(on) - 600 c = - 2.0ma, v ce = - 5v i c = - 10ma, v ce = - 5v small signal characteristics output capacitance c obo cb = - 10.0v, f = 1.0mhz, i e = 0 current gain - bandwidth product f t 100 270 ce = - 5v, i c = - 10ma, f = 100mhz note: 9 . measured under pulsed conditions. pulse width ? 300 s. duty cycle ? 2%.
BC857BFZ document number: ds37158 rev. 2 - 2 5 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 8 typical base-emitter turn-on voltage vs. collector current - v , b a s e - e m i t t e r t u r n - o n v o l t a g e ( v ) b e ( o n ) v = -5v ce t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a 0 1 2 3 4 5 -v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.18 - i , c o l l e c t o r c u r r e n t ( a ) c 0.16 i = -2ma b i = -0.2ma b i = -0.4ma b i = -0.6ma b i = -0.8ma b i = -1.6ma b i = -1.4ma b i = -1.2ma b i = -1.8ma b i = -1ma b 0.01 0.1 1 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) t = -55c a i /i = 10 cb t = 25c a t = 125c a t = 150c a t = 85c a 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 9 typical base-emitter saturation voltage vs. collector current - v , b a s e - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) b e ( s a t ) t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a gain = 10 0 50 100 150 200 250 300 350 400 450 500 550 600 0 1 10 100 1,000 -i , collector current (ma) c fig. 5 typical dc current gain vs. collector current - h , d c c u r r e n t g a i n f e t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a v = 5v ce 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 7 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) 1 i /i = 20 cb t = -55c a t = 25c a t = 150c a t = 85c a t = 125c a
BC857BFZ document number: ds37158 rev. 2 - 2 6 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x2 - dfn0606 - 3 dim min max typ a 0.36 0.42 0.39 a1 0 0.05 0.02 b 0.10 0.20 0.15 d 0.57 0.67 0.62 d2 0.155 bsc d3 0.185 bsc e 0.57 0.67 0.62 e2 0.40 0.60 0.50 e 0.35 bsc k 0.16 ref l 0.09 0.21 0.15 l2 0.11 0.31 0.21 all dimensions in mm dimensions value (in mm) c 0.350 x 0.280 x1 0.350 x2 0.760 y 0.200 y1 0.600 a a1 seating plane d e l(2x) k b(2x) e e2 l2 e/2 d2 d3 x y c y1 x1 x2
BC857BFZ document number: ds37158 rev. 2 - 2 7 of 7 www.diodes.com october 2014 ? diodes incorporated BC857BFZ new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporate d www.diodes.com
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